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来源:雅诚德英语网
Analyzing the carrier density and photon density of VCL in active region, the physical mechanism of gain clamping was revealed.
分析有源区内载流子和VCL光子密度的变化,揭示了增益钳制的物理机理。
Analyzing the carrier density and photon density of VCL in active region, the physical mechanism of gain clamping was revealed.
分析有源区内载流子和VCL光子密度的变化,揭示了增益钳制的物理机理。