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来源:雅诚德英语网
The simulated results indicate that thinner and longer channel can reduce short channel effects, while thicker gate oxide will lead to higher subthreshold slopes.
模拟结果显示:越细长的沟道,器件的短沟效应越弱,器件的亚阈值斜率随栅氧化层增厚而加大。
The simulated results indicate that thinner and longer channel can reduce short channel effects, while thicker gate oxide will lead to higher subthreshold slopes.
模拟结果显示:越细长的沟道,器件的短沟效应越弱,器件的亚阈值斜率随栅氧化层增厚而加大。